Download HM2301D Datasheet PDF
H&M Semiconductor
HM2301D
HM2301D is P-Channel 20V MOSFET manufactured by H&M Semiconductor.
DESCRIPTION The +0' is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. APPLICATIONS - Power Management in Note book - Portable Equipment - Battery Powered System FEATURES - RDS(ON)= 0.48Ω @VGS=-4.5V - RDS(ON)= 0.67Ω @VGS=-2.5V - RDS(ON)= 0.95Ω @VGS=-1.8V - RDS(ON)= 2.20Ω @VGS=-1.5V - Super high density cell design for extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability - Capable doing Cu wire bonding - Load Switch - DSC 2301- Marking and pin Assignment SOT-23 top view Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Maximum Ratings -20 ±6 Unit V V - Th Oct, 2014-Ver1.0 Shenzhen H&M Semiconductor Co.Ltd http://.hmsemi....