• Part: HM2301F
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 521.88 KB
Download HM2301F Datasheet PDF
H&M Semiconductor
HM2301F
HM2301F is P-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
Description The HM2301F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features - VDS = -20V,ID = -2.8A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V - High power and current handing capability - Lead free product is acquired - Surface mount package Application - PWM applications - Load switch S Schematic diagram A1SHB Marking and pin assignment SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package A1SHB SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current -Pulsed (Note 1) ID IDM Maximum Power Dissipation Oper...