HM2301F
HM2301F is P-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
Description
The HM2301F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
General Features
- VDS = -20V,ID = -2.8A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
Application
- PWM applications
- Load switch
S Schematic diagram
A1SHB Marking and pin assignment
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
A1SHB
SOT-23
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous Drain Current -Pulsed (Note 1)
ID IDM
Maximum Power Dissipation
Oper...