HM2301KR
HM2301KR is P-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
DESCRIPTION
The HM2301KR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
- VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V
S Schematic diagram
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Marking and pin Assignment
Application
- PWM applications
- Load switch
- Power management
SOT-323 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
SOT-323
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current -Pulsed (Note 1)
Maximum Power...
