HM2302B
HM2302B is N-Channel Trench Power MOSFET manufactured by H&M Semiconductor.
N-Channel Trench Power MOSFET
General Description
The HM2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.
Features
- VDS = 20V,ID =2.5A RDS(ON) < 60mΩ @ VGS =4.5V RDS(ON) < 90mΩ @ VGS =2.5V
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Application
- Battery protection
- Load switch
- Power management
Schematic Diagram SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
A2sHB
SOT-23
Reel Size...
