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HM2302B Datasheet N-channel Trench Power MOSFET

Manufacturer: H&M Semiconductor

Overview: N-Channel Trench Power MOSFET General.

General Description

The HM2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a battery protection or in other switching application.

Key Features

  • VDS = 20V,ID =2.5A RDS(ON) < 60mΩ @ VGS =4.5V RDS(ON) < 90mΩ @ VGS =2.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

HM2302B Distributor