HM2302BJR Datasheet | H&M Semiconductor

SOT-723 Plastic-Encapsulate MOSFETS HM2302BJR N-Channel MOSFET V(BR)DSS 20 V RDS(on)MAX 380mΩ@ 4.5V 450mΩ@ 2.5V 800mΩ@1.8V 0.75A SOT-723 1. GATE 2. SOURCE 3. DRAIN Features z Lead Free Product is Acquired z Surface Mount Package z N-Channel Switch with Low RDS(on) z Operated at Low Logic Level Gate Drive APPLICATION z Load/Power Switching z Interfacing Switching z Battery Management for Ultra Small Portable Electronics z Logic Level Shift MARKING Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Typical Gate-Source Voltage Continuous Drain Current (note 1) Pulsed Drain Current (tp=10μs) Power Dissipation (note 1)...