HM2302BKR
HM2302BKR is N-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
DESCRIPTION
The HM2302BKR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
APPLICATIONS
- Power Management in Note book
- Portable Equipment
- Battery Powered System
- Load Switch
- FEATURES
- RDS(ON)= 270 mΩ @VGS=4.5V
- RDS(ON)= 330 mΩ @VGS=2.5V
- RDS(ON)= 450 mΩ @VGS=1.8V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- Capable doing Cu wire bonding
N-Channel
3D
G1
2S
Marking and pin Assignment
SOT-323 top view
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter Drain-Source Voltage Gate-Source Voltage
Symbol VDS VGS
Maximum Ratings
20 ±8
Unit V V
- Th Nov, 2013-Ver1.0
Shenzhen H&M Semiconductor Co.Ltd http：//.hmsemi.
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