HM2302BSR Overview
The HM2302BSR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System Load Switch.
HM2302BSR Key Features
- RDS(ON)= 270 mΩ @VGS=4.5V
- RDS(ON)= 330 mΩ @VGS=2.5V
- RDS(ON)= 450 mΩ @VGS=1.8V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
- Capable doing Cu wire bonding
HM2302BSR Applications
- Power Management in Note book
