• Part: HM2302BWKR
  • Description: Dual N-Channel Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: H&M Semiconductor
  • Size: 390.23 KB
Download HM2302BWKR Datasheet PDF
H&M Semiconductor
HM2302BWKR
Description Features The HM2302BWKR uses advanced trench technology to SURYLGHexcellent RDS(ON), low gate charge and operation ZLWKJDWHvoltages as low as 1.8V, in the small SOT363 IRRWSULQW,Wcan be used for a wide variety of applications, LQFOXGLQJload switching, low current inverters and low FXUUHQW'&DC converters.It is ESD protected. VDS (V) = 20V ID = 0.9 A (VGS = 4.5V) RDS(ON) <270m RDS(ON) <330m RDS(ON) <450m (VGS = 4.5V) (VGS = 2.5V) (VGS = 1.8V) SC70-6L (SOT-363) Top View Bottom View Pin1 D1 S1 D1 G1 G2 G1 D2 S2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B Power Dissipation A TA=25°C...