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HM2302BWKR

Manufacturer: H&M Semiconductor

HM2302BWKR datasheet by H&M Semiconductor.

HM2302BWKR datasheet preview

HM2302BWKR Datasheet Details

Part number HM2302BWKR
Datasheet HM2302BWKR-HMSemiconductor.pdf
File Size 390.23 KB
Manufacturer H&M Semiconductor
Description Dual N-Channel Enhancement Mode Field Effect Transistor
HM2302BWKR page 2 HM2302BWKR page 3

HM2302BWKR Overview

Features The HM2302BWKR uses advanced trench technology to SURYLGHexcellent RDS(ON), low gate charge and operation ZLWKJDWHvoltages as low as 1.8V, in the small SOT363 IRRWSULQW,Wcan be used for a wide variety of applications, LQFOXGLQJload switching, low current inverters and low FXUUHQW'&DC converters.It is ESD protected. The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz....

HM2302 from other manufacturers

View HM2302 datasheet index

Brand Logo Part Number Description Other Manufacturers
ETC HM2302 Digital temperature and humidity sensor ETC
VBsemi Logo HM2302 N-Channel MOSFET VBsemi
H&M Semiconductor logo - Manufacturer

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