HM2302D Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: .3* 1&KDQQHO9'6026)(7 GENERAL.

Datasheet Details

Part number	HM2302D
Manufacturer	H&M Semiconductor
File Size	638.79 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2302D-HMSemiconductor.pdf

The HM2302D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● Load Switch ●

ES.
RDS(ON)= 270 mΩ @VGS=4.5V.
RDS(ON)= 330 mΩ @VGS=2.5V.
RDS(ON)= 450 mΩ @VGS=1.8V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Capable doing Cu wire bonding DSC 1&KDQQHO 3D 2302D G1 2S Marking and pin Assignment SOT-23 top view Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Maximum Ratings 20 ±8 Unit V.

Brand Logo	Part Number	Description	Manufacturer
ETC	HM2302	Digital temperature and humidity sensor	ETC
	HM2302	N-Channel MOSFET	VBsemi

Part Number	Description
HM2302DR	N-Channel 20V MOSFET
HM2302	N-Channel Enhancement Mode Power MOSFET
HM2302A	N-channel MOSFET
HM2302B	N-Channel Trench Power MOSFET
HM2302BJR	N-Channel Enhancement Mode Power MOSFET
HM2302BKR	N-Channel Enhancement Mode Power MOSFET
HM2302BSR	N-Channel Enhancement Mode Power MOSFET
HM2302BWKR	Dual N-Channel Enhancement Mode Field Effect Transistor
HM2302E	N-Channel Enhancement Mode Power MOSFET
HM2302F	N-Channel Enhancement Mode Power MOSFET