HM2302DR
HM2302DR is N-Channel 20V MOSFET manufactured by H&M Semiconductor.
DESCRIPTION
The HM2302DR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
APPLICATIONS
- Power Management in Note book
- Portable Equipment
- Battery Powered System
- Load Switch
- FEATURES
- RDS(ON)= 270 mΩ @VGS=4.5V
- RDS(ON)= 330 mΩ @VGS=2.5V
- RDS(ON)= 450 mΩ @VGS=1.8V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- Capable doing Cu wire bonding
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter Drain-Source Voltage Gate-Source Voltage
Symbol VDS VGS
Maximum Ratings
20 ±8
Unit V V
- Th
Nov, 2013-Ver1.0
.3- 8
1&KDQQHO9'6026)(7
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter Drain-Source Voltage Gate-Source Voltage
Symbol VDS VGS
Maximum Ratings
20 ±8
Unit V V
Electrical Characteristics (Tj =25℃ Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max Unit
STATIC BVDSS VGS(th) IGSS IDSS
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current
VGS=0V, ID=250μA VDS=VGS, ID=250μA VDS=0V, VGS=±8V VDS=20V, VGS=0V
20...
