HM2302E datasheet by H&M Semiconductor.
| Part number | HM2302E |
|---|---|
| Datasheet | HM2302E-HMSemiconductor.pdf |
| File Size | 693.00 KB |
| Manufacturer | H&M Semiconductor |
| Description | N-Channel Enhancement Mode Power MOSFET |
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The HM2302E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| ETC | HM2302 | Digital temperature and humidity sensor | ETC |
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HM2302 | N-Channel MOSFET | VBsemi |
View all H&M Semiconductor datasheets
| Part Number | Description |
|---|---|
| HM2302 | N-Channel Enhancement Mode Power MOSFET |
| HM2302A | N-channel MOSFET |
| HM2302B | N-Channel Trench Power MOSFET |
| HM2302BJR | N-Channel Enhancement Mode Power MOSFET |
| HM2302BKR | N-Channel Enhancement Mode Power MOSFET |
| HM2302BSR | N-Channel Enhancement Mode Power MOSFET |
| HM2302BWKR | Dual N-Channel Enhancement Mode Field Effect Transistor |
| HM2302D | N-Channel Enhancement Mode Power MOSFET |
| HM2302DR | N-Channel 20V MOSFET |
| HM2302F | N-Channel Enhancement Mode Power MOSFET |
