HM2302E
HM2302E is N-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
Description
The HM2302E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.
Features
- VDS = 15V,ID =2.0A RDS(ON) < 55mΩ @ VGS =4.5V RDS(ON) <85mΩ @ VGS =2.5V
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Application
- Battery protection
- Load switch
- Power management
Schematic Diagram SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2302E
SOT-23
Reel Size Ø180mm
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V）
VGS Gate-Source Voltage (VDS=0V)
ID IDM (pluse)
Drain Current-Continuous Drain Current-Continuous@ Current-Pulsed (Note 1)
PD Maximum Power Dissipation
TJ,TSTG
Operating...
