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HM2302F Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HM2302F N-Channel Enhancement Mode Power MOSFET.

General Description

The HM2302F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

General

Key Features

  • VDS = 20V,ID = 2.8A RDS(ON) < 50mΩ @ VGS=2.5V RDS(ON) < 40mΩ @ VGS=4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Schematic diagram A2SHB Marking and pin assignment.

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HM2302F Distributor