• Part: HM2302F
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 528.01 KB
Download HM2302F Datasheet PDF
H&M Semiconductor
HM2302F
HM2302F is N-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
Description The HM2302F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features - VDS = 20V,ID = 2.8A RDS(ON) < 50mΩ @ VGS=2.5V RDS(ON) < 40mΩ @ VGS=4.5V - High power and current handing capability - Lead free product is acquired - Surface mount package Schematic diagram A2SHB Marking and pin assignment Application - Battery protection - Load switch - Power management SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package A2SHB SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) ID...