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HM2305B Datasheet

P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM2305B Overview

The HM2305B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

HM2305B Key Features

  • VDS = -12V,ID = -4.1A RDS(ON) <78mΩ @ VGS=-2.5V RDS(ON) < 55mΩ @ VGS=-4.5V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package

HM2305B Distributor