Datasheet4U Logo Datasheet4U.com
H&M Semiconductor logo

HM2309

Manufacturer: H&M Semiconductor

HM2309 datasheet by H&M Semiconductor.

HM2309 datasheet preview

HM2309 Datasheet Details

Part number HM2309
Datasheet HM2309-HMSemiconductor.pdf
File Size 810.58 KB
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
HM2309 page 2 HM2309 page 3

HM2309 Overview

The HM2309 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

HM2309 Key Features

  • RDS(ON)≦215mΩ@VGS=-10V
  • RDS(ON)≦260mΩ@VGS=-4.5V
  • Super high density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current
  • Capable doing Cu wire bonding

HM2309 from other manufacturers

View HM2309 datasheet index

Brand Logo Part Number Description Other Manufacturers
VBsemi Logo HM2309 P-Channel 60V MOSFET VBsemi
H&M Semiconductor logo - Manufacturer

More Datasheets from H&M Semiconductor

View all H&M Semiconductor datasheets

Part Number Description
HM2309A P-Channel Enhancement Mode Power MOSFET
HM2309APR P-Channel Enhancement Mode Power MOSFET
HM2309B P-Channel Enhancement Mode Power MOSFET
HM2309C P-Channel Enhancement Mode Power MOSFET
HM2309F P-Channel Enhancement Mode Power MOSFET
HM2300 N-Channel Enhancement Mode Power MOSFET
HM2300B N-Channel Enhancement Mode Power MOSFET
HM2300C N-Channel Enhancement Mode Power MOSFET
HM2300D N-Channel Enhancement Mode Power MOSFET
HM2300DR N-Channel Enhancement Mode Power MOSFET

HM2309 Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts