HM2309A
HM2309A is P-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
P-Channel Enhancement Mode Power MOSFET
Description
The HM2309A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications.
General Features
- VDS =-60V,ID =-4A RDS(ON) <120mΩ @ VGS=-10V RDS(ON) <170mΩ @ VGS=-4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
Application
- Load switch
- PWM application
Schematic diagram 60P04Y
Marking and pin Assignment
SOT-23-3L top view
Package Marking and Ordering Information
Device Marking 60P04Y
Device HM2309A
Device Package...
