HM2309B
HM2309B is P-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
P-Channel 60V(D-S)
GENERAL DESCRIPTION
The HM2309B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
Features
- RDS(ON)≦188mΩ@VGS=-10V
- RDS(ON)≦266mΩ@VGS=-4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- Capable doing Cu wire bonding
APPLICATIONS
- Power Management
- Portable Equipment
- Battery Powered System
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