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HM2309B

Manufacturer: H&M Semiconductor

HM2309B datasheet by H&M Semiconductor.

HM2309B datasheet preview

HM2309B Datasheet Details

Part number HM2309B
Datasheet HM2309B-HMSemiconductor.pdf
File Size 894.67 KB
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
HM2309B page 2 HM2309B page 3

HM2309B Overview

The HM2309B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

HM2309B Key Features

  • RDS(ON)≦188mΩ@VGS=-10V
  • RDS(ON)≦266mΩ@VGS=-4.5V
  • Super high density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current
  • Capable doing Cu wire bonding

HM2309 from other manufacturers

View HM2309 datasheet index

Brand Logo Part Number Description Other Manufacturers
VBsemi Logo HM2309 P-Channel 60V MOSFET VBsemi
H&M Semiconductor logo - Manufacturer

More Datasheets from H&M Semiconductor

View all H&M Semiconductor datasheets

Part Number Description
HM2309 P-Channel Enhancement Mode Power MOSFET
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HM2309C P-Channel Enhancement Mode Power MOSFET
HM2309F P-Channel Enhancement Mode Power MOSFET
HM2300 N-Channel Enhancement Mode Power MOSFET
HM2300B N-Channel Enhancement Mode Power MOSFET
HM2300C N-Channel Enhancement Mode Power MOSFET
HM2300D N-Channel Enhancement Mode Power MOSFET
HM2300DR N-Channel Enhancement Mode Power MOSFET

HM2309B Distributor

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