HM2309B Description
The HM2309B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
HM2309B Key Features
- RDS(ON)≦188mΩ@VGS=-10V
- RDS(ON)≦266mΩ@VGS=-4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
- Capable doing Cu wire bonding