HM2309C Datasheet | H&M Semiconductor

+0& P Channel Enhancement Mode MOSFET DESCRIPTION HM2309C is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 FEATURE -60V/-3.0A, RDS(ON) = 150m-ohm (Typ.) @VGS = -10V -60V/-2.5A, RDS(ON) = 185m-ohm @VGS =...