HM2310B datasheet by H&M Semiconductor.
| Part number | HM2310B |
|---|---|
| Datasheet | HM2310B-HMSemiconductor.pdf |
| File Size | 690.38 KB |
| Manufacturer | H&M Semiconductor |
| Description | N-Channel Enhancement Mode Power MOSFET |
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The HM2310B is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high side switching.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
HM2310 | N-Channel 60V MOSFET | VBsemi |
View all H&M Semiconductor datasheets
| Part Number | Description |
|---|---|
| HM2310 | N-Channel Enhancement Mode Power MOSFET |
| HM2310C | N-Channel Enhancement Mode Power MOSFET |
| HM2310DR | N-Channel Enhancement Mode Power MOSFET |
| HM2310PR | N-Channel Enhancement Mode Power MOSFET |
| HM2312 | N-Channel Enhancement Mode Power MOSFET |
| HM2312B | N-Channel Enhancement Mode Power MOSFET |
| HM2314 | N-Channel Enhancement Mode Power MOSFET |
| HM2314B | N-Channel Enhancement Mode Power MOSFET |
| HM2318 | N-Channel Enhancement Mode Power MOSFET |
| HM2318A | N-Channel Enhancement Mode Power MOSFET |
