HM2310B Datasheet | H&M Semiconductor

DESCRIPTION The HM2310B is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high side switching. PIN CONFIGURATION SOT-23 FEATURE l- 60V/4.0A, RDS(ON) = 55mΩ @VGS = 10V l- 60V/3.0A, RDS(ON) = 60mΩ @VGS = 4.5V l- Super high density cell design for extremely low RDS(ON) l- Exceptional on-resistance and maximum DC current capability l- SOT-23 package design 1.Gate 2.Source 3.Drain PART MARKING SOT-23 24YA Y: Year Code A: Process Code N Channel Enhancement Mode MOSFET ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Drain-Source Voltage VDSS Gate-Source Voltage VGSS ±20 Continuous Drain Current TJ=150℃) TA=25℃ TA=70℃ 4.0 2.6 Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ 1.8 1.0 Operation Junction Temperature -55/150...