HM2310DR Datasheet | H&M Semiconductor

DESCRIPTION The HM2310DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES - VDS =60V,ID =5A RDS(ON) <105mΩ @ VGS=10V RDS(ON) < 125mΩ @ VGS=4.5V - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application - Battery Switch - DC/DC Converter S Schematic diagram DFN2X2-6L bottom view Package Marking And Ordering Information Device Marking Device Device Package DFN2X2-6L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ,TSTG Limit 60 ±20 5 15 1.7 -55 To 150 Unit V V A A W ℃ Thermal...