HM2310DR datasheet by H&M Semiconductor.
| Part number | HM2310DR |
|---|---|
| Datasheet | HM2310DR-HMSemiconductor.pdf |
| File Size | 521.09 KB |
| Manufacturer | H&M Semiconductor |
| Description | N-Channel Enhancement Mode Power MOSFET |
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The HM2310DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
HM2310 | N-Channel 60V MOSFET | VBsemi |
View all H&M Semiconductor datasheets
| Part Number | Description |
|---|---|
| HM2310 | N-Channel Enhancement Mode Power MOSFET |
| HM2310B | N-Channel Enhancement Mode Power MOSFET |
| HM2310C | N-Channel Enhancement Mode Power MOSFET |
| HM2310PR | N-Channel Enhancement Mode Power MOSFET |
| HM2312 | N-Channel Enhancement Mode Power MOSFET |
| HM2312B | N-Channel Enhancement Mode Power MOSFET |
| HM2314 | N-Channel Enhancement Mode Power MOSFET |
| HM2314B | N-Channel Enhancement Mode Power MOSFET |
| HM2318 | N-Channel Enhancement Mode Power MOSFET |
| HM2318A | N-Channel Enhancement Mode Power MOSFET |
