HM2310PR Overview
The HM2310PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application.
HM2310PR datasheet by H&M Semiconductor.
| Part number | HM2310PR |
|---|---|
| Datasheet | HM2310PR-HMSemiconductor.pdf |
| File Size | 383.25 KB |
| Manufacturer | H&M Semiconductor |
| Description | N-Channel Enhancement Mode Power MOSFET |
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The HM2310PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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HM2310 | N-Channel 60V MOSFET | VBsemi |
View all H&M Semiconductor datasheets
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