HM2310PR Datasheet | H&M Semiconductor

Description The HM2310PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature - VDS =60V,ID =4.0A RDS(ON) <100mΩ @ VGS=10V RDS(ON) < 120mΩ @ VGS=4.5V - High Power and current handing capability - Lead free product is acquired - Surface mount package Application - Battery switch - DC/DC converter S Schematic diagram SOT-89 -3L top view Package Marking and Ordering Information Device Marking Device Device Package SOT-89-3L Reel Size Ø180mm Tape width 12mm Quantity 1000units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ,TSTG Limit 60 ±20 4 12 1.7 -55 To...