• Part: HM25P15
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 434.22 KB
Download HM25P15 Datasheet PDF
H&M Semiconductor
HM25P15
Description The HM25P15 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =-150V,ID =-25A RDS(ON) <135mΩ @ VGS=-10V (Typ.=120m R) RDS(ON) <160mΩ @ VGS=-10V (Typ.=131m R) - Super high dense cell design - Advanced trench process technology - Reliable and rugged - High density cell design for ultra low On-Resistance Schematic diagram Application - Portable equipment and battery powered systems Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package TO-220-3L Reel Size Tape width Quantity Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power...