• Part: HM25SDN03Q
  • Description: Dual Asymmetric N-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 533.03 KB
Download HM25SDN03Q Datasheet PDF
H&M Semiconductor
HM25SDN03Q
Features - Pin configuration RDSON Typ. Top view 12m R@10V 30V ±20V 25A 1m R@4V5 - Description This device uses advanced trench technology to provide excellent RDSON and low gate charge. This device is suitable for use as a load switch or in PWM applications. - Applications - Power Management in notebook puter - Portable Equipment - Battery Powered Systems - Ordering Information Device Package Shipping HM25SDN03Q DFN3X3 5000/Reel Bottom View HM25SDN03Q YYWW Marking - Absolute Maximum Ratings(TA=25℃ unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain-to-Source Voltage VGSS Gate-to-Source Voltage ±20 TC=25℃...