Dual Asymmetric N-channel Enhancement Mode MOSFET
| Part number | HM25SDN03Q |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 533.03 KB |
| Description | Dual Asymmetric N-Channel Enhancement Mode MOSFET |
| Datasheet | HM25SDN03Q-HMSemiconductor.pdf |
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This device uses advanced trench technology to provide excellent RDSON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Parameter Junction-to-Ambient a Junction-to-Case Typical Maximum 55 6 Unit ℃/W.
See all H&M Semiconductor datasheets
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