HM30SDN02D Overview
The HM30SDN02D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. It includes two specialized MOSFETs in a dual Power DFN5x6 package.
HM30SDN02D Key Features
- VDS =20V,ID =30A
- Excellent gate charge x RDS(on) product(FOM)
- Very low on-resistance RDS(on)
- 150 °C operating temperature
- Pb free terminal plating
- RoHS pliant
- Halogen free
- pact DC/DC converter