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HM3207BD Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HM3207BD N-Channel Enhancement Mode Power MOSFET.

General Description

The HM3207BD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in Automotive applications and a wide variety of other applications.

General

Key Features

  • VDSS =70V,ID =180A RDS(ON) < 4mΩ @ VGS=10V.
  • Good stability and uniformity with high EAS.
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation Schematic diagram HM3207BD.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
H-M semi Logo HM3207 N-Channel Power MOSFET H-M semi

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HM3207BD Distributor