HM3207BD
HM3207BD is N-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
N-Channel Enhancement Mode Power MOSFET
Description
The HM3207BD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications.
General Features
- VDSS =70V,ID =180A RDS(ON) < 4mΩ @ VGS=10V
- Good stability and uniformity with high EAS
- Special process technology for high ESD capability
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
Schematic diagram
Application
- Automotive applications
- Hard switched and high frequency circuits
- Uninterruptible power...
