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HM3207D

Manufacturer: H&M Semiconductor

HM3207D datasheet by H&M Semiconductor.

HM3207D datasheet preview

HM3207D Datasheet Details

Part number HM3207D
Datasheet HM3207D-HMSemiconductor.pdf
File Size 288.54 KB
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
HM3207D page 2 HM3207D page 3

HM3207D Overview

The +0' uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications.

HM3207D Key Features

  • VDSS =75V,ID =210A RDS(ON) < 4mΩ @ VGS=10V
  • Good stability and uniformity with high EAS
  • Special process technology for high ESD capability
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Excellent package for good heat dissipation
  • Automotive

HM3207 from other manufacturers

View HM3207 datasheet index

Brand Logo Part Number Description Other Manufacturers
H-M semi Logo HM3207 N-Channel Power MOSFET H-M semi
H&M Semiconductor logo - Manufacturer

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