HM3422A Overview
The HM3422A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high side switching.
HM3422A Key Features
- 60V/6.0A, RDS(ON) = 28mΩ (Typ.) @VGS = 10V
- 60V/2.5A, RDS(ON) = 38mΩ @VGS = 4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
