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HM35SDN03D

Manufacturer: H&M Semiconductor

HM35SDN03D datasheet by H&M Semiconductor.

HM35SDN03D datasheet preview

HM35SDN03D Datasheet Details

Part number HM35SDN03D
Datasheet HM35SDN03D-HMSemiconductor.pdf
File Size 784.49 KB
Manufacturer H&M Semiconductor
Description 30V Half Bridge Dual N-Channel Super Trench Power MOSFET
HM35SDN03D page 2 HM35SDN03D page 3

HM35SDN03D Overview

The HM35SDN03D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. It includes two specialized MOSFETs in a dual Power DFN5x6 package.

HM35SDN03D Key Features

  • VDS =30V,ID =35A
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 150 °C operating temperature
  • Pb free terminal plating
  • RoHS pliant
  • Halogen free
  • pact DC/DC converter
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HM35SDN03D Distributor

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