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HM3N10 Datasheet

N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM3N10 Overview

The HM1 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM3N10 Key Features

  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Excellent package for good heat dissipation
  • Power switching application
  • Hard switched and high frequency circuits
  • Uninterruptible power supply

HM3N10 Distributor