HM3N20PR
Description
The HM3N20PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
VDS = 200V,ID =3A RDS(ON) < 1300mΩ @ VGS=10V (Typ:1000mΩ)
High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation
Application
Power switching application Hard switched and high frequency circuits Uninterruptible power supply
HM3N20PR SOT-89-3L top view
Package Marking and Ordering Information
Product ID
Pack
Marking
SOT-89-3L
3N20
Qty(PCS) 3000
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
200 ±20
3 9 3 -55...
