HM3N20PR Description
The HM3N20PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
- Part: HM3N20PR
- Manufacturer: H&M Semiconductor (official site)
- Size: 1.24 MB
Related H&M Semiconductor Datasheets
| Part Number | Description |
|---|---|
| HM3N10 | N-Channel Enhancement Mode Power MOSFET |
| HM3N10AMR | N-Channel Enhancement Mode Power MOSFET |
| HM3N10MR | N-Channel Enhancement Mode Power MOSFET |
| HM3N10PR | N-Channel Enhancement Mode Power MOSFET |
| HM3N150A | silicon N-channel Enhanced VDMOSFET |