HM3N20PR Overview
The HM3N20PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
HM3N20PR Details
| Part number | HM3N20PR |
|---|---|
| Datasheet | HM3N20PR-HMSemiconductor.pdf |
| File Size | 1.24 MB |
| Manufacturer | H&M Semiconductor |
| Description | 200V N-Channel Enhancement Mode MOSFET |
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