Silicon N-channel Power MOSFET
| Part number | HM3N30R |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 510.96 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet | HM3N30R-HMSemiconductor.pdf |
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： VDSS 300 V HM3N30R, the silicon N-channel Enhanced ID 3 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 2.5 W which reduce the conduction loss, improve switching RDS(ON)TYP 2.6 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOT-223, which accords with the...
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