HM3N30R
Description
：
VDSS
HM3N30R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
PD (TC=25℃)
W which reduce the conduction loss, improve switching
RDS(ON)TYP
Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is
SOT-223, which accords with the Ro HS standard.
Features
： l Fast Switching l Low ON Resistance(Rdson≤3.2Ω) l Low Gate Charge (Typical Data:5n C) l Low Reverse transfer capacitances(Typical:4.5p F) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of LCD Power and adaptor.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol
VDSS
IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3
TJ，Tstg TL
Parameter
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche...
