HM3P10MR Overview
The HM3P10MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
HM3P10MR Details
| Part number | HM3P10MR |
|---|---|
| Datasheet | HM3P10MR-HMSemiconductor.pdf |
| File Size | 904.75 KB |
| Manufacturer | H&M Semiconductor |
| Description | -100V P-Channel Enhancement Mode MOSFET |
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