• Part: HM3P10MR
  • Description: -100V P-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 904.75 KB
Download HM3P10MR Datasheet PDF
H&M Semiconductor
HM3P10MR
Description The HM3P10MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -100V ID =-3.0 A RDS(ON) < 210mΩ @ VGS=10V Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking SOT23-3L 3P10 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Total Power Dissipation3 TSTG Storage Temperature Range TJ RθJA RθJC Operating Junction Temperature Range Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 Qty(PCS) 3000 Rating -100 ±20 -3.0 -2.1 -9.0 1 -55 to 150 -55 to 150 125...