• Part: HM40P03Q
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 840.67 KB
Download HM40P03Q Datasheet PDF
H&M Semiconductor
HM40P03Q
DESCRIPTION The HM40P03Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES - VDS = -30V,ID = -40A RDS(ON) < 8.9mΩ @ VGS=-10V RDS(ON) <12.9mΩ @ VGS=-4.5V - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application - Battery Switch - Load switch - Power management S Schematic diagram DFN 3x3 EP top view Package Marking And Ordering Information Device Marking Device Device Package DFN3X3-8L Reel Size Ø330mm Tape width 2500 units Quantity 12mm Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ,TST G Limit -30 ±20 -40 -120 75 -55 To...