HM40SDN02Q is Dual Asymmetric N-Channel Enhancement Mode MOSFET manufactured by H&M Semiconductor.
| Part Number | Description |
|---|---|
| HM40DN04K | Dual N-Channel Enhancement Mode Power MOSFET |
| HM40N04D | N-Channel Enhancement Mode Power MOSFET |
| HM40N04K | N-Channel Enhancement Mode Power MOSFET |
| HM40N06D | N-Channel Enhancement Mode Power MOSFET |
| HM40N120FT | 1200V 40A IGBT |
This device uses advanced trench technology to provide excellent RDSON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Parameter Junction-to-Ambient a Junction-to-Case Typical Maximum 55 6 Unit ℃/W.
