HM40SDN02Q datasheet by H&M Semiconductor.
| Part number | HM40SDN02Q |
|---|---|
| Datasheet | HM40SDN02Q-HMSemiconductor.pdf |
| File Size | 627.53 KB |
| Manufacturer | H&M Semiconductor |
| Description | Dual Asymmetric N-Channel Enhancement Mode MOSFET |
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This device uses advanced trench technology to provide excellent RDSON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Parameter Junction-to-Ambient a Junction-to-Case Typical Maximum 55 6 Unit ℃/W.
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