HM4110 Description
pulse width ≦ 300ns, duty cycle ≦ 2%. Guaranteed by design, not subject to production testing. Page HM4110 100VDS／±25VGS／170A(ID) N-Channel Enha ncement Mode MOSFET.
HM4110 Key Features
- VDSS=0V／VGSS=±25V／ID=10A
- Low Dense Cell Design
- Reliable and Rugged
- Advanced trench process technology