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HM4421F Datasheet

P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM4421F Overview

The HM4421F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

HM4421F Key Features

  • VDS =-60V,ID =-7.5A RDS(ON) <45mΩ @ VGS=-10V RDS(ON) <60mΩ @ VGS=-4.5V
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Load switch
  • Tape width
  • Quantity

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