HM45N02Q Description
The HM45N02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
HM45N02Q Key Features
- VDS =20V,ID =45A RDS(ON) <5.5mΩ @ VGS=4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Load switching
- Hard switched and high frequency circuits
- Uninterruptible power supply
- Tape width
- Quantity