HM45N02Q
Description
The HM45N02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =20V,ID =45A RDS(ON) <5.5mΩ @ VGS=4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Application
- Load switching
- Hard switched and high frequency circuits
- Uninterruptible power supply
Schematic diagram Pin Assignment
100% UIS TESTED! 100% ∆Vds TESTED!
DFN 3.3x3.3 EP top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
DFN3X3-8L
Reel Size
- Tape width
- Quantity
- Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain...
