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HM4618SP Datasheet

Common-drain Dual N-channel Enhancement Mode Field Effect Transistor

Manufacturer: H&M Semiconductor

HM4618SP Overview

The HM4618SP uses advanced trench technology to provide excellent RSS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its mon-drain configuration. Package Dimensions Unit.

HM4618SP Key Features

  • VSSS =20V,IS =6A
  • 2.5V drive
  • mon-drain type
  • 2KV HBM
  • Minimum Packing Quantity : 5,000 pcs./reel
  • Lithium-ion battery charging and discharging switch

HM4618SP Distributor