HM4630D
Description
The HM4630D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The plementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
General Features
- N-Channel VDS = 30V,ID =5A RDS(ON) < 36mΩ @ VGS=4.5V RDS(ON) < 52mΩ @ VGS=2.5V
- P-Channel VDS = -30V,ID = -5A RDS(ON) < 6.5mΩ @ VGS=-4.5V RDS(ON) < 120mΩ @ VGS=-2.5V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
N-channel
P-channel
Pin assignment
Package Marking and Ordering Information
Device Marking Device
Device Package Reel Size
Tape width
DFN2X2-6L
Ø180mm
8mm
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Quantity
3000 units
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current (Note 1)
TA=25℃ TA=70℃
Maximum Power Dissipation
TA=25℃
Operating Junction and Storage Temperature Range
Thermal...
