HM4806B
HM4806B is Dual N-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
Dual N-Channel Enhancement Mode Power MOSFET
Description
The HM4806B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
- VDS =20V,ID =21A RDS(ON) < 5.5mΩ @ VGS=4.5V RDS(ON) < 9mΩ @ VGS=2.5V
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
Application
- DC/DC Converter
- Notebook Vcore
Schematic diagram HM4806B
Marking and pin Assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute...
