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HM4806D Datasheet Dual N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HM4806D Dual N-Channel Enhancement Mode Power MOSFET.

General Description

The HM4806D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

General

Key Features

  • VDS =20V,ID =12A RDS(ON) < 8mΩ @ VGS=4.5V RDS(ON) < 8.5mΩ @ VGS=2.5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.

HM4806D Distributor