HM4828A
HM4828A is Dual N-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
DESCRIPTION
The HM4828A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
- VDS =60V,ID =4.5A RDS(ON) <35mΩ @ VGS=10V (Typ.26mΩ) RDS(ON) <45mΩ @ VGS=4.5V (Typ.32mΩ)
Schematic diagram
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Low Gate to Drain Charge to Reduce Switching Losses
Application
- Power switching application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
Marking and pin Assignment
100% ΔVds TESTED!
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range
IDM PD TJ,TSTG
Limit
60 ±20 4.5 3.0 24
2 -55 To...
