HM4892A
Key Features
- VDSS=100V／VGSS=±20V／ID=6.5A RDS(ON)=37mΩ(max.)@VGS=10V
- Reliable and Rugged
- Advanced trench process technology
- High Density Cell Design For Low On-Resistance
Applications
- Boost for LED Backlight
- Part: HM4892A
- Description: Dual N-Channel MOSFET
- Category: MOSFET
- Manufacturer: H&M Semiconductor
- Size: 1.02 MB