HM4892A Description
HM4892A 100VDS／±20VGS／6.5A(ID) Dual N-Channel Enhancement Mode MOSFET.
HM4892A Key Features
- VDSS=100V／VGSS=±20V／ID=6.5A
- Reliable and Rugged
- Advanced trench process technology
- High Density Cell Design For Low
HM4892A Applications
- Power Management in Inverter System
- Boost for LED Backlight