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HM4953B Datasheet Dual P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HM4953B Dual P-Channel Enhancement Mode Power MOSFET.

General Description

The HM4953B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

DD GG GENERAL

Key Features

  • VDS = -20V,ID = -5A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 60mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package SS Schematic diagram HM4953B Marking and pin Assignment.

More Datasheets from H&M Semiconductor

Part Number Description
HM4953 Dual P-Channel Enhancement Mode Power MOSFET
HM4953A Dual P-Channel Enhancement Mode Power MOSFET
HM4953C Dual P-Channel Enhancement Mode Power MOSFET
HM4953D P-Channel Enhancement Mode Power MOSFET
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HM4922 20V Full-Bridge of MOSFET
HM4923 30V Full-Bridge of MOSFET
HM4924 40V Full-Bridge of MOSFET
HM4924B 40V Full-Bridge of MOSFET
HM4926 60V Full-Bridge of MOSFET

HM4953B Distributor