HM4N10D
DESCRIPTION
The HM4N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
GENERAL FEATURES
- VDS =100V,ID =4A RDS(ON) <160mΩ @ VGS=10V RDS(ON) <170mΩ @ VGS=4.5V
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Application
- Battery Switch
- DC/DC Converter
S Schematic diagram
DFN2X2-6L bottom view
Package Marking And Ordering Information
Device Marking
Device
Device Package
DFN2X2-6L
Reel Size Ø180mm
Tape width 8mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
100 ±20 4 12...
