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HM4N10D Datasheet

N-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM4N10D Overview

The HM4N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

HM4N10D Key Features

  • VDS =100V,ID =4A RDS(ON) <160mΩ @ VGS=10V RDS(ON) <170mΩ @ VGS=4.5V
  • High Power and current handing capability
  • Lead free product is acquired
  • Surface Mount Package
  • Battery Switch -DC/DC Converter

HM4N10D Distributor