HM4N65I
Description
This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and mutation mode. These devices are well suited for low vo ltage ap plications su ch as DC/DC converters a nd hig h efficiency switching for power management in portable and battery operated products.
Features
- 4.0A, 650V, RDS(on) = 2.6(Typ) @VGS = 10 V
- Low gate charge ( typical 15n C)
- High ruggedness
- Fast wsitching
- 100% avalanche tested
- Improved dv/dt capability
{D
TO-252
TO-251
- ◀▲
{G
- -
{S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current
- Pulsed
(Note 1)
VGSS
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note...
