HM5853 Overview
HM5853 bines an PChannel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward voltage schottky diode. The tiny and thin outline saves PCB consumption. Max Unit Schottky Reverse BV IR=100uA 20 V Breakdown Voltage Forward Voltage VF Drop IF=0.5A 0.41 0.45 V Maximum reverse IR leakage current VR=20V 15 200 uA +0 Symbol Parameter Test Conditions Min Typ.