P-channel MOSFET
| Part number | HM5853 |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 935.54 KB |
| Description | P-Channel MOSFET |
| Datasheet | HM5853-HMSemiconductor.pdf |
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HM5853 bines an PChannel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward voltage schottky diode. The tiny and thin outline saves PCB consumption. Max Unit Schottky Reverse BV IR=100uA 20 V Breakdown Voltage Forward Voltage VF Drop IF=0.5A 0.41 0.45 V Maximum reverse IR leakage current VR=20V 15 200 uA +0 Symbol Parameter Test Conditions Min Typ.
See all H&M Semiconductor datasheets
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