• Part: HM5P02MR
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 455.76 KB
Download HM5P02MR Datasheet PDF
H&M Semiconductor
HM5P02MR
Description The HM5P02MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features - VDS = -20V,ID = -5.0A RDS(ON) <35mΩ @ VGS=-2.5V RDS(ON) < 25mΩ @ VGS=-4.5V S Schematic diagram 5P02 - High power and current handing capability - Lead free product is acquired - Surface mount package Marking and pin assignment Application - PWM applications - Load switch - Power management SOT-23/ top view Package Marking and Ordering Information Device Marking Device Device Package 5P02 SOT23-3L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage TC =25℃ Continuous Drain Current TC =70℃ TA =25℃ TA =70℃ Drain Current -Pulsed (Note...