HM607K Datasheet | H&M Semiconductor

N&P-Channel V plementary MOSFET Description The +0. uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel - VDS =30V,ID = 5A RDS(ON) <7mΩ @ VGS=10V RDS(ON) <12mΩ @ VGS=4.5V p channel - VDS =-30V,ID =- 25A RDS(ON) <mΩ @ VGS=-10V RDS(ON) <5mΩ @ VGS=-4.5V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Application - H-bridge - Inverters +0. Schematic diagram +0. Marking...