HM60N04K Datasheet | H&M Semiconductor

+01. N-Channel Enhancement Mode Power MOSFET Description The +01. uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =40V,ID =60A RDS(ON) <13mΩ @ VGS=10V - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Schematic diagram +01. Application - Load switching - Hard switched and high frequency circuits - Uninterruptible power supply Marking and pin assignment 100% UIS...