HM65P03D Description
The HM65P03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
HM65P03D Key Features
- VDS =-30V,ID =-65A RDS(ON) = 2.8mΩ (Typ) @ VGS=-10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
- Battery and loading switching
- Tape width
- Quantity